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Transport Properties at Interfaces between Conductive Oxide ReO3 and Cuprate Superconductors
|Nobuyuki Iwata , Motoshi Masui , Akira Muramatsu , Hiroshi Yamamoto|
Nihon University, College of Science and Technology, Department of Electronics and Computer Science, 7-24-1, Narashinodai, Funabashi-shi 274-8501, Japan
As well known superconducting transition temperatures Tc's increase as the number of CuO2 planes in the unit cell increases up to n=3, for example in a series of Bi-, Tl-, Hg-based cuprate superconductors (CSC's). However, if sufficient carriers are doped in the CSC's including CuO2 planes above n=4, a higher Tc is expected. It is expected that the higher Tc will be realized at an interface between ReO3 and CSC's. The ReO3 reveals the highest conductivity among oxide materials. As conductive oxides are deposited on the CSC's, a carrier doping takes place adequately from the conductive oxides to CSC's deeply around the interface, specifically taking a role like as a charge reservoir block. In this study we attempt to obtain the highest conductive ReO3 thin film and investigate the transport properties of bi-layer of ReO3 / CSC's.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium E, by Nobuyuki Iwata
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-28 09:49 Revised: 2009-06-08 12:55