As well known superconducting transition temperatures Tc's increase as the number of CuO₂ planes in the unit cell increases up to n=3, for example in a series of Bi-, Tl-, Hg-based cuprate superconductors (CSC's). However, if sufficient carriers are doped in the CSC's including CuO₂ planes above n=4, a higher Tc is expected. It is expected that the higher Tc will be realized at an interface between ReO₃ and CSC's. The ReO₃ reveals the highest conductivity among oxide materials. As conductive oxides are deposited on the CSC's, a carrier doping takes place adequately from the conductive oxides to CSC's deeply around the interface, specifically taking a role like as a charge reservoir block. In this study we attempt to obtain the highest conductive ReO₃ thin film and investigate the transport properties of bi-layer of ReO₃ / CSC's.
The Re oxides thin films are prepared by off-axis RF magnetron sputtering. Target is a metal Re disc and a substrate is quartz. The films are grown at ambient substrate temperature for 60min, and then post-annealing in-situ is carried out in Ar or O₂ atmosphere for 30min. And also ReO₃ thin film is deposited on oxygen-vacant YBa₂Cu₃O₆ (YBCO) and SrCuO₂, which were already grown with other deposition equipment.
At annealing temperatures above 200 degree C, cubic ReO₃ grew preferentially aligned along the (100) direction. Despite of a large residual resistivity, the resistivity decreased linearly with decreasing temperature. The minimum resistivity was obtained in a film annealed at about 200 degree C and was 4.4×10^-5 ohm cm at room temperature. Above 280 degee C rhenium oxides was totally sublimated. The resistivity behavior of both bilayers was roughly similar to that of ReO₃ thin film. In this case the interface might be contaminated after exposure to the air. In-situ growth of bilayers will be carried out to develop the resistivity and to show the higher Tc.

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