The influence of hard radiation on electrical and recombination properties of semiconductors is successfully used in radiation technology of parameters management on silicon and germanium electronic devices. This technology is based on controllable accumulation of radiation induced defects (RD) in Si or Ge crystals structure. Temperature of a crystal under irradiation strongly influences on the generation rate, accumulation efficiency and spectrum of dominant RD [1-2]. The experimental results of RD accumulation in silicon and germanium single crystals under 1 МeV electron irradiation at temperatures 10-650 К are submitted in this report. It is shown, that the accumulation of most important for technology RD is determined not only balance of generation and annealing processes of secondary RD. It appears, that annihilation and dissociation of genetic Frenkel pairs (primary RD) non monotone depends on crystal temperature under irradiation. The theoretical analysis of experimental results has shown: acoustic and optical phonons influence on generation rate of RD. Phonons brake down the "hot" self interstitial atoms, created by radiation. Braking of interstitial component of genetic Frenkel pair increases the probability it annihilation with vacancy. Efficiency of free vacancy generation under irradiation accordingly is decreased and the secondary RD accumulation is accordingly slowed down too. Besides the influence of intensity of electron irradiation on annealing of dominant secondary RD in Si – A-centre is discovered. The probable mechanisms of this influence are discussed.

REFERENCES

1. Kraichinskii A.M., Neimash V.B., Rogutskii I.S., Shpinar L.I. // Ukr.J.Phys.- 1999.- v.44, N.1-2.- p.259-262.

2. E.Siemon, J.M.Rafi, C.Claeys, V.Neimash, A.M.Kraitchinskii, M.M.Kras'ko, V.V.Tishchenko, V.V.Voytovych, J.Versluys, P.Clauws. //Jap.J.Appl.Phys. - 2003. - v.42, N.12, - p.7184-7188.

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