Role of phonons on radiation defects formation in silicon and germanium

Vladimdir Neimash 1Anatoliy Kraitchinskii 1Andriy Kolosyuk 1Mykola Kras'ko 1Ruslan Petrunya 2Volodymyr A Makara 2Olexandr Kabaldin 3Volodymyr M. Tsmots 3

1. Institute of Physics, National Academy of Sciences, Prospekt Nauki 46, Kyiv 03650, Ukraine
2. Taras Shevchenko Kyiv University, Physics Department, 2 Glushkov Prosp., Build. 1, Kyiv 03680, Ukraine
3. Drohobych Ivan Franko state pedagogical university, laboratory of materials of microelectronics, 24, Ivan Franko Str., Drohobych 82100, Ukraine


The influence of hard radiation on electrical and recombination properties of semiconductors is successfully used in radiation technology of parameters management on silicon and germanium electronic devices. This technology is based on controllable accumulation of radiation induced defects (RD) in Si or Ge crystals structure. Temperature of a crystal under irradiation strongly influences on the generation rate, accumulation efficiency and spectrum of dominant RD [1-2]. The experimental results of RD accumulation in silicon and germanium single crystals under 1 МeV electron irradiation at temperatures 10-650 К are submitted in this report. It is shown, that the accumulation of most important for technology RD is determined not only balance of generation and annealing processes of secondary RD. It appears, that annihilation and dissociation of genetic Frenkel pairs (primary RD) non monotone depends on crystal temperature under irradiation. The theoretical analysis of experimental results has shown: acoustic and optical phonons influence on generation rate of RD. Phonons brake down the "hot" self interstitial atoms, created by radiation. Braking of interstitial component of genetic Frenkel pair increases the probability it annihilation with vacancy. Efficiency of free vacancy generation under irradiation accordingly is decreased and the secondary RD accumulation is accordingly slowed down too. Besides the influence of intensity of electron irradiation on annealing of dominant secondary RD in Si – A-centre is discovered. The probable mechanisms of this influence are discussed.


1. Kraichinskii A.M., Neimash V.B., Rogutskii I.S., Shpinar L.I. // Ukr.J.Phys.- 1999.- v.44, N.1-2.- p.259-262.

2. E.Siemon, J.M.Rafi, C.Claeys, V.Neimash, A.M.Kraitchinskii, M.M.Kras'ko, V.V.Tishchenko, V.V.Voytovych, J.Versluys, P.Clauws. //Jap.J.Appl.Phys. - 2003. - v.42, N.12, - p.7184-7188.

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Presentation: Poster at E-MRS Fall Meeting 2009, Symposium I, by Andriy Kolosyuk
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-01-26 10:25
Revised:   2009-06-07 00:48
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