Recently, porous silicon (PS), as a promising material for visible light emission by photoluminescence (PL) attracted attention due to possible photonic applications in different devices like LED, waveguide, field emitter, optical memory etc. Theoretical assumption basis on quantum explanation of the visible light luminescence, but the details of the mechanism are still not completely understood. In other hand, from the practical viewpoint, stability and lifetime of photoluminescence is very important factor. Stability and lifetime of PS photoluminescence can be significantly improved in the way of application of the efficient surface passivation method. Recently different chalcogenide (selenium or sulfur) treatments received attention as an alternative heteroepitaxy-compatible Si surface passivation method. In present study PS surface selenium treatment has been performed in order to improve stability and lifetime of PS photoluminescence.
PS layers were prepared at room temperature by electrochemical etching in HF:H2O:C2H5OH solution at working current of the etching process from 50 to 800 mA and the anodization voltage from 1 to 29 V. The back side of the sample was illuminated with a 50 W halogen lamp. Selenium treatment was performed by silicon immersion into the selenious acid aqueos solution.
PL properties of initial and selenium treated PS structures were investigated in the visible and near-infrared spectral region. Silicon surface structural changes after selenium treatment were investigated by XPS. The influence of surface structural and composition changes on PL properties was defined.

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