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Study of selfcompensation in CdZnTe:Cl crystals.

Alexander I. Terentev 1Oleg A. Matveev 1Nataliya K. Zelenina 1Vladimir N. Guskov 2

1. Ioffe Physico-Technical Institute (Ioffe), Polytechnicheskaya, 26, Saint-Petersburg 194021, Russian Federation
2. N.S. Kurnakov Institute of General and Inorganic Chemistry RAS (IGIC RAS), GSP-1, Leninskii prosp., 31, Moscow 1199911, Russian Federation


The process of self-compensation of conductance in Cd {1-x} Znx Te:Cl (x=0,05) crystals was investigated with annealing of the singlecrystal samples in Cd vapors. The samples were stood at temperature 900ะก under controlled pressure of Cd during the time necessary for setting of diffusion homogeneity of charged lattice defects concentration; then they were slowly cooled up to room temperature. Concentration of Cl in the crystal in this process remains constant and concentration of Cd vacancies is determined by pressure of Cd vapour above the sample.
Concentration of free charge carriers in the samples after annealing (n and p) was defined by measuring of Hall effect. Low n and p values in the obtained samples testify to the deep self-compensation in the crystal in the annealing conditions. The characteristic feature of obtained results is low value of n = 107-109 cm -3 for wide range of cadmium vapour pressure changes. It considerably differs from analogous dependence of selfcompensation in CdTe:Cl crystals [1]. It is possible to explain this difference by the strong influence of zinc on concentration of the deep center responsible for selfcompensation in a band gap of the semiconductor, i.e. by participation of Zn in creation of the charged lattice defect.
[1]. Matveev O.A. and Terent'ev A.I. Semiconductors, 1993, v.27, n.11-12, pp.1043-1047.


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Presentation: poster at E-MRS Fall Meeting 2004, Symposium F, by Alexander I. Terentev
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-26 12:47
Revised:   2009-06-08 12:55