Silicon (Si) nanoparticles is one of promising materials for application to flat panel display such as light emitting diodes (LED) and electroluminescence (EL) because it emits visible light at room temperature. Previously, we obtained red luminescence with long lifetime and high brightness from the Si nanoparticles based EL device under relatively low operating voltage. In this paper, we report a correlation between defects and luminescent property from the EL device composed of Si nanoparticles which emits green light.
The Si nanoparticles were formed in a silicon dioxide (SiO₂) layer by co-sputtering of Si/SiO₂ targets and subsequently annealing at high temperature. The Si nanoparticles, then, were appeared on the sample surface by treating in hydrofluoric (HF) acid solution. The size of Si nanoparticles, which appeared on the surface, was tuned by the thermal oxidation treatment to vary the luminescent color. And the oxidized Si nanoparticles used as luminous layer of EL device.
The EL device using oxidized Si nanoparticles exhibited green luminescence with a peak of 560 nm by the reduction of particle size due to oxidation onto the surface. The luminance of green luminescence was increased with increasing the density of P_ce-center (radiative recombination center) on the Si nanoparticle surface because the P_b-center (non-radiative recombination center) was terminated with oxygen atoms.

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