The wide band gap semiconductor lead iodide (PbI₂) present interest from the practical point of view, since the perspective of their utilization for optical recording of information has been established, they are used in detectors of X-ray and gamma-rays, as well as in some other devices.
Large stoichiometric PbI₂ single crystals with a low dislocation density can be grown from the vapor phase in the presence of excess iodine. This process, however, has not yet been studied in sufficient detail.
The equilibrium vapor composition in the Pb - I₂ system at temperatures from 400 to 2000 K and total pressures from 102 to 105 Pa was assessed by thermodynamic analysis. The results show that the dominant vapor species is PbI₂. PbI₂ dissociation is significant starting at 1000 - 1300 K depending on the total pressure in the system.
PbI₂ transport in the PbI₂ - I₂ system is analyzed using a model of mass transport in a nonisothermal one-dimensional system of constant volume containing one or two vapor species. The derived equations provide a self-consistent solution to the problem of mass transport and pressure distribution in the system. Experimental results confirm that the rate of mass transport is governed by the source and deposition temperatures and iodine vapor pressure. The optimal conditions of PbI₂ crystal growth from the vapor phase are established.

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1. Morphology and structural perfection of vapor-grown PbI2 crystals