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Evaluation of residual stress in PZT films produced by laser ablation using X-Ray Diffraction and Raman spectroscopy

Sofia A. Rodrigues 1Anabela G. Rolo 1Anatoli A. Khodorov 1Mario Pereira Maria J. Gomes 1

1. University of Minho (UM), Campus de Gualtar, Braga 4710057, Portugal

Abstract

Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse. The film growth was performed in O2 atmosphere (0,40 mbar) while the substrate was heated at 600ºC by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, the films with different compositions Zr/Ti 55/45, 65/35 and 92/8 were successfully grown.

The residual stresses in the PZT films were studied using Raman spectroscopy and X-ray diffraction techniques. Based on lattice parameters and the elastic constants of PZT the stress in the films was estimated from XRD measurements using the calculated d-spacing in the stressed and unstressed states. The results revealed the presence of compressive stress in PZT with composition 55/45 and tensile stress in the others. On the other hand, analysing the shift of Raman phonon frequency in the A1(TO3) and E(LO3) vibration modes the stresses in this films were also estimated. The residual stresses extracted from the A1(TO3) mode are consistent with those extracted from the E(LO3) mode as well as with the stresses calculated from x-ray diffraction data.

 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium I, by Maria J. Gomes
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-31 21:32
Revised:   2009-06-07 00:48