We present a new method of nanolithography, using scanning electron microscopy. We explore the effecting parameters on electron beam lithography and solutions to improve its quality. A tri-layer of PMMA/ Ni/ Si is simulated and being experimented using Scanning Electron Microscopy. Simulation is being done by Monte Carlo method with a minimum number of 20.000 electrons. The effect of various thicknesses of Ni and PMMA is studied in different voltages. Silicon is the most usual substrate in integrated circuits fabrication. Nickel is below the PMMA layer in order to absorb the radiated electrons by SEM. The thickness of nickel is varied during the simulation process to study its effect on proximity effect.

The silicon substrate, used in the simulation is p-type or n- type to decrease the charging effect with <100> orientation. For the second layer, two thicknesses of 10nm and 100 nm is considered. Simulation is also done for voltages ranging from 5 KV to 30 KV with 5 KV steps.

With increasing the beam voltage, backscattering coefficient of electrons increases. Due to minimum backscattering coefficient in 10KeV, it is the optimum voltage to perform the lithography process. Increasing the nickel thickness is also increases the backscattering coefficient in all conditions. Thus the minimum nickel thickness is preferred. In the other hand, more nickel thickness results in more absorption coefficient.

Also in more thicknesses of PMMA layer, the thickness of nickel layer is not as effective as its thin layer in proximity effect.

Considering the parameters above, optimum point from backscattering point of view is the voltage of 10K Volts, PMMA thickness of 1.5 microns, and nickel thickness of 10 nanometers and from diffusion depth point of view is the voltage of 10 K Volts, PMMA thickness of 0.7 microns, and nickel thickness of 100 nanometers.

• Legal notice:
  

  Copyright (c) Pielaszek Research, all rights reserved.
  The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
  In every case, proper references including Author(s) name(s) and URL of this webpage: https://science24.com/paper/16067 must be provided.