Silicon carbide materials, which show very high thermal conductivity, may form interesting applicative compositions when combined with metals of similar properties, such as e.g. copper. Layered Si-C materials and also volumetric composites (also containing SiC fibers) are of special interest. It is however difficult to join these materials, since silicon carbide is not wetted by copper, and since SiC may be decomposed as a result of its reacting with the elements of high chemical activity introduced into copper. Therefore, the process of bonding of these materials should involve the formation of a ‘barrier layer’ on their surface, such that will bind the decomposition products, restrict the diffusion of active components into the ceramic and ensure its good wettability by liquid copper. The most advantageous active additives able to hamper the decomposition of SiC should enable MeSiC compounds to be synthesized.

The present study was concerned with the wettability of sintered SiC and graphite surfaces by copper and its alloys, and how this wettability is changed when these surfaces were modified with active metals, such as Mn, Ti, Cr and Al. The metals were deposited using the sputtering method and powder metallurgy.

            Certain properties of the SiC_f composites produced by the diffusion welding of fibers, plated galvanically with copper, and by pressing a copper powder with the fibers are discussed. The paper also describes the diffusion phenomena that take place in the interface layers of a SiC-Cu/SiC_f composite-steel joint.

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