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Raman Spectroscopy of boron-doped silicon nanowires

Marcin Marczak 1,2Emmanuelle Pichonat 3Wojciech Gębicki 1Thierry Mélin 2Djamila Hourlier 2

1. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
2. Institut d'Electronique de Microelectronique et de Nanotechnologie, UMR CNRS 8520 (IEMN), BP 60069 - Cité scientifique-avenue Poincaré, Villeneuve d'Ascq 59652 Cedex, France
3. Laboratoire de Spectrochimie Infrarouge et Raman, Université des Sciences et Technologies de Lil (LASIR), Bâtiment C5, Villeneuve d'Ascq 59655, France


We report the results of a Raman scattering study of an array of well aligned and individual isolated boron doped silicon nanowires (B-SiNW). Nanowires were grown by VLS utilizing CVD (Chemical Vapor Deposition) technique. Different excitation wavelengths were used (514nm and 632nm) to check the heating effects and the dependence of the Raman spectra on the excitation laser line. An asymmetric broadening and a shift of the LO-TO Raman band (520cm-1) and boron feature at 620cm-1 have been observed in all analyzed samples. The asymmetry and shift are the result of the phonons interactions with the continuum of filled electron states, where increased number of free carriers are provided by boron doping.. Our data can be well fitted with a Fano-shape line, with the asymmetry parameter q<4. This indicates that the free carriers’ concentration exceeds 1019 cm-3 [1]. Another factor that influence the silicon peak position is a sample laser heating. A nanowire perpendicular to the surface has been measured in function of a laser spot distant from the surface. A shift of 1-2cm-1 is visible.

[1] Cardeira et al. Phys. Rev. B 8, 4734 (1973)

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Presentation: Oral at E-MRS Fall Meeting 2008, Symposium J, by Marcin Marczak
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-16 16:46
Revised:   2009-06-07 00:48