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Fabrication of Sm0.5Sr0.5CoO3 cathode thin films for IT-SOFC by Electrostatic Spray Depositon

Inyu Park 1Jongmo Im 1Sungeun Jang Dongwook Shin 

1. Hanyang University, 14-509, Heangdang-Dong, Seong-dong-Gu, Seoul 133-791, Korea, South

Abstract

Strontium-doped samarium cobaltite (Sm0.5Sr0.5CoO3, SSC) has good electrochemical properties for intermediate-temperature solid oxide fuel Cells (IT-SOFCs) because it has a mixed-conduction characteristic of electronic and ionic conductivities. It has higher ionic conductivities than other cathode materials for SOFCs such as LSM and LSGM. The Electrostatic Spray Deposition (ESD) method has some advantages such as being a simple apparatus, the convenience of controlling the microstructure of thin films and a variety of choices for precursor solution. In this study, the ESD method was applied to fabricate porous SSC thin films for a SOFC cathode. Samarium chloride hexahydrate (SmCl3·6H2O), strontium chloride hexahydrate (SrCl2·6H2O), cobalt nitrate hexahydrate (Co(NO3)2·6H2O) as starting materials and methyl alcohol as solvent were used to make precursor solution. The porous SSC films were deposited on Si substrate and the microstructure was dependent on processing parameters such as substrate temperature, distance from nozzle to substrate, applied voltage and flow rate of a syringe. Scanning Electron Microscope (SEM) and X-ray Diffractometer (XRD) measurement were used to investigate the microstructure and crystallinity of the SSC films. The ESD technique is shown to be an efficient method by which SOFCs’ cathode films can be fabricated tailored for the desired phases and microstructures.

 

Auxiliary resources (full texts, presentations, posters, etc.)
  1. PRESENTATION: Fabrication of Sm_{0.5}Sr_{0.5}CoO_{3} cathode thin films for IT-SOFC by Electrostatic Spray Depositon, Microsoft Office Document, 0MB
 

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Related papers

Presentation: Poster at E-MRS Fall Meeting 2008, Symposium F, by Inyu Park
See On-line Journal of E-MRS Fall Meeting 2008

Submitted: 2008-05-16 12:13
Revised:   2009-06-07 00:48