Properties of silicon nanocrystals in silicon dioxide matrix (nc-Si/SiO₂) were investigated in detail because of its effective photoluminescence. Methods of preparation allow changing the sizes of nanocrystals in wide range. Formation mechanisms and photoluminescence properties of silicon nanocrystals were described in literature but the mechanisms of charge carrier transfer in nc-Si/SiO₂ structures were insufficiently investigated. It is necessary to know electrophysical properties of these structures at the room temperature to produce light-emitting devices. The purpose of our work was the investigation of influence of nc-Si size and concentration on charge carrier transport in nc-Si/SiO₂ structures.

The nc-Si/SiO₂ structures were prepared by a method of high temperature annealing of SiO/SiO₂ layers which had been deposited by reactive evaporation on n-type monocrystalline silicon. The thermal annealing was made in the N₂ atmosphere at a temperature of 1100 ⁰C. The size of silicon nanocrystals varied from 3 to 6 nm. The conductivity of nc-Si/SiO₂ structures was measured by picoammeter/voltage source Keithley 6487.

The current-voltage characteristics of nc-Si/SiO₂ structures with silicon nanocrystals of different size nanocrystals were investigated at room temperature. A strong decrease of the conductivity of nc-Si/SiO₂ structures was found with increasing silicon nanocrystals number. It was shown that in case of one nc-Si/SiO₂ layer the resistance of investigated samples was generally determined by potential barrier resistance on Si/SiO₂ interface. The conductivity of these structures increased significantly with the growth of nc-Si/SiO₂ layers and the process of charge carrier transfer was determined by this region.

The model of charge carrier transfer in nc-Si/SiO₂ structures was suggested. The temperature dependence of nc-Si/SiO₂ structures conductivity was investigated. The possibility of temperature influence on charge carrier transport was analyzed.

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