The fabrication of transparent thin film transistors (TTFT) requires the growth of high quality thin films with specific properties in order to have different functionalities as channel materials, transparent electrodes and gate dielectrics. In this work indium tin oxide (ITO) and barium strontium titanate (BST, Ba/Sr=0.25) were studied for transparent electrode and high-k gate insulator of a TTFT. ITO and BST thin films were grown on various substrates (quartz and single crystals) at different temperatures by the pulsed electron beam deposition method (PED). The latter is a low cost growth technique of oxides thin films with high quality surface morphology even at low processing temperatures. The composition, structure and surface morphology of ITO and BST thin films were determined by Rutherford Backscattering Spectrometry, X-ray diffraction and Scanning Electron Microscopy measurements. These characterizations showed that the films are stoichiometric, crystalline, smooth and dense. The quality of ITO thin films depends strongly on the growth conditions. Electrical properties of ITO thin films (resistivity, charge carrier density and mobility) were investigated by temperature-dependent conductivity and Hall effect measurements in the van der Pauw geometry, for different growth conditions. Dielectric measurements were performed for the BST thin films. Optical absorption spectra were measured in UV to near IR for ITO and BST thin films. These results will be presented and discussed in the frame of applications in transparent electronics.

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