Lithium Niobate (LiNbO₃) is one of the most ideal candidate for electro-optic, optical waveguide and SAW devices because of its good electro-optic, piezoelectric, pyroelectric, photo-elastic and non-linear optical properties. LiNbO₃ in thin film offers great advantages over the bulk because of producing high electric field with low applied voltage, the possibility to produce step-index profiles and ease introduction of dopant. It is desirable to grow LiNbO₃ films with c-axis orientation to couple the large eleectro optical and non- linear optical coefficients along this direction

In this work highly c-axis oriented LiNbO₃ films have been deposited by pulsed laser deposition technique on the silicon substrate using a transparent conducting Al doped ZnO inter-layer.  X-ray diffraction and Raman spectroscopic analysis show the fabrication of single phased LiNbO₃ films with minimal intrinsic defect structure under the optimized deposition conditions. The presence of possible intrinsic defects in the films deposited under varying processing conditions has been investigated and correlated with the presence of superfluous peaks in Raman spectra. Dielectric properties of the LiNbO₃ films deposited under the static and rotating substrate mode have been studied in the metal-insulator-metal configuration. Films deposited under the rotating substrate mode are found to result in dielectric properties close to the single crystals and attributed to the further reduction in the intrinsic and interfacial defects. The origin of the possible defects and its influence on the optical and structural properties of the films has been discussed.

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