Novel architectures for electronics and photonics are expected to be developed using the forthcoming SiGe technology. However, in SiGe-based heterostuctures, material and design issues rely on accurate control of strain and composition of the alloy. Raman spectroscopy has rapidly emerged as a reliable technique to the quantitative determination of such parameters on a sub-micrometric scale. In particular, we demonstrated that Raman spectroscopy enables measurements of concentration and strain with a sensitivity comparable to that of x-ray diffraction.

In this work we present an investigation of the effects of the growth conditions of SiGe graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied with a quantitative measurement of the residual strain in SiGe/Si heterostructures, which is carried out by means of Raman scattering. Our approach is effective to study the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.

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