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Growth phenomena and optoelectronic properties of mixed-phase amorphous-crystalline nanosystems |
Alessandro Mattoni , Luciano Colombo |
CNR-INFM SLACS and Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, Monserrato (Cagliari) I-09042, Italy |
Abstract |
Mixed-phase amorphous-crystalline (a-c) systems are both of technological and theoretical relevance.[1] In particular, this is the case of nanocrystalline (nc) materials, where a distribution of nanosized crystal grains is embedded into an amorphous matrix. nc-systems are useful for advanced optoelectronics, structural engineering, and many other technological applications. nc-systems are in most cases thermodynamically metastable. Since the free energy is larger in the amorphous phase than in the corresponding crystalline one, a-c systems tend to recrystallize.[2] It is possible to take advantage of this property in order to synthesize new materials by solid phase crystallization.[3] A comprehensive physical understanding and theoretical modeling of the recrystallization phenomena is mostly needed and useful for technological impact. We investigate at the atomic scale the microstructure evolution of a two-phase amorphous-crystalline system. We focus on the case of textured nanocrystalline silicon here described as a distribution of cylindrical grains embedded into an amorphous matrix. We prove that the growth of an isolated grain is nonuniform and it can be described by a power law model.[2] Furthermore, we study the case of a distribution of grains in absence of nucleation. The atomistic results are used to work out a comparison with Kolmogorov-Johnson-Mehl-Avrami (KJMA) mesoscopic model describing the kinetics of a first-order phase transformation. Deviations from the KJMA are observed that are mainly due to atomic-scale features. We include such effects by using an improved version of the KJMA theory. Finally, the optoelectronic properties of the nc-systems are studied during the recrystallization process by means of large scale empirical tight binding calculations. [1] A. Mattoni and L. Colombo, submitted for publication (2008) [2] A. Mattoni and L. Colombo, Phys. Rev. Lett. 99 205501 (2007) [3] A. Mattoni and L. Colombo, Phys. Rev. B 69 045204 (2004) |
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Presentation: Invited oral at E-MRS Fall Meeting 2008, Symposium G, by Alessandro MattoniSee On-line Journal of E-MRS Fall Meeting 2008 Submitted: 2008-05-09 15:40 Revised: 2009-06-07 00:48 |