The ITO thin films (In : Sn = 90 : 10) were prepared by the sol gel dip-coating process on glass substrates, followed by annealing in air. The effect of annealing in the temperature range of 150–550^oC on the electrical, optical and structural properties of ITO thin films has been studied. The electrical resistivity of ITO thin films was decreased by increasing annealing temperature. XRD pattern showed that increasing annealing temperature increased the crystallinity of thin films and at 550^oC high quality crystalline thin films with preferentially oriented in the (111) direction. The UV-vis transmittance spectra were also confirmed that the annealing temperature has significant effect on the transparency of thin films. The highest transparency at wavelength 520 nm of spectrum 92.3% obtained at 550^oC on annealing temperature. The allowed direct band gap at temperature range 150^oC-550^oC was estimated 3.32 eV – 4.15 eV. It was observed that the direct energy gap increases as the annealing temperature increases.

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