In this work, focused ion beam (FIB) technique was employed to characterize the interface between diamond and Silicon substrate. We used a hot  filament chemical vapor deposition (HFCVD) reactor to synthesize the diamond and manufacture the cross-sectional parts.

Diamond synthesis from liquid carbon source has a relatively high growth rate and wide area of deposit among various carbon sources. HFCVD is a popular method for growing diamond particles or films. The HFCVD equipment used  in the present work is simple and easy to operate.

First, we tried to synthesize a nano crystalline diamond (NCD) on Silicon substrate by HFCVD from liquid carbon source of ethanol. The structure, surface morphology, and grain size of the diamond were examined by field emission scanning electron microscopy (FE-SEM) and Raman spectroscopy. We confirmed our diamond particles as NCD with a typical Raman peak. We also observed diamond particles under 200nm in diameter with FE-SEM.

To analyze the interface between NCD and Silicon substrate with transmission electron microscope (TEM), a cross-sectional sample was prepared by  FIB technique. Also,  image analysis by STEM, element analysis, energy-dispersive X-ray spectroscopy (EDS) and electron energy-loss spectroscopy (EELS) were performed.

The intermediate thin layer between NCD and Silicon substrate a few nm in thickness was characterized and confirmed with EDS and EESL. Further  important analysis will be presented at   the meeting.

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1. Hydrogen-free CVD nano diamond particle synthesis with graphite rod heating