The knowledge of defect type and distribution induced during ion implantation in oxide materials is of special technological interest in microelectronics processing. In this work, using Slow Positron Implantation Spectroscopy, we tentatively characterize the nature of possible open-volume defects resulting from such irradiation in cubic zirconia (fully-stabilized with 9.5 mole % of yttria). In particular, in order to check which empty substitutional sites are effective in trapping positrons, we implanted self-ions (e.g. : oxygen) at low energy (projected range ~ 200 nm). The trapping dependence on both the irradiation dose and the temperature annealing up to 1100 C is compared with previous results obtained after foreign ion implantation (noble gas ions for instance).

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