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(Ga,Gd)As thin film growth by mass-analyzed low energy IBE |
Song S. Lin 1, Chen N. Fu , Zhou J. Ping , Yang S. Yan , Liu Z. Kai |
1. Song shulin, No.35, Tsinghua East road, Beijing 100083, China |
Abstract |
Ferromagnetic semiconductors can make full use of the spin degree of electron and provide bench for new ideas and new concepts. (Ga,Gd)As thin film is fabricated by mass-analyzed low energy ion beam epitaxy technique with Gd+ ion can provide much bigger magnetic momentum. There is no new phase found by X-ray diffraction (XRD) while the main substrate peaks broaden by Double-crystal X-ray diffraction (DC-XRD). |
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Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Song S. LinSee On-line Journal of E-MRS Fall Meeting 2003 Submitted: 2003-06-19 03:50 Revised: 2009-06-08 12:55 |