The present paper deals with studies of Si-Ge whisker growth in sealed Si-Br and Si-Ge-Br systems by CVD method. The whiskers were grown in a tube loaded in a furnace with temperature gradient. The temperatures of evaporation and crystallization zones were 1300-1500 K and 1000-1400 K, respectively. As a result of growth process the whiskers with diameters 0.1-50 μm were created. Ge content as well as the whisker homogenity were controlled by microprobe analysis. Modeling of whisker homogenity based on calculation of vapour phase content and analysis of such thermodynamical parameter as oversaturation was carried out. Good agreement between calculated data and experiment was obtained.

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