Recently, (low temperature) LT growth of GaAs has become an increasingly important method since it provides highly insulating films and contributes to the synthesis of magnetic semiconductors. We will examine the (reflection high-energy electron diffraction) RHEED behaviour during (molecular-beam-epitaxy) MBE growth on GaAs (001) surface at LT growth condition in our work. The RHEED and its intensity oscillation of LT GaAs growth has some particular behaviour. The intensity, phase and decay of oscillation depend on the (beam equivalent pressure) BEP ratio and substrate temperature. We will give here an explanation for the phase change dependence on the deposition temperature. Furthermore an examination of the intensity dependence of RHEED behaviour on BEP ratio and substrate temperature will given here.

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1. Behaviour of RHEED Oscillation during LT-GaAs Growth