Solid-state lighting

Arturas Zukauskas 1Michael S. Shur 3Remis Gaska 2

1. Vilnius University, Institute of Materials Science and Applied Research (IMSAR, VU), Sauletekio 9, building III, Vilnius LT-2040, Lithuania
2. Sensor Electronic Technology, Inc., Columbia, SC, United States
3. Rensselaer Polytechnic Institute (RPI), 110 - 8th St., MRC-218, Troy, NY 12180, United States


Recent breakthroughs in growth of novel wide-bandgap materials, and in the design of high brightness light-emitting diodes (LEDs) have resulted in the
development of a new exciting solid-state lighting technology [1]. In addition to future application for general lighting, mass applications of solid-state lighting now include full-color video displays, signals, traffic lights, and local and decorative illumination. In addition, many niche applications in phototherapy, photosynthesis, and optical measurements have emerged. In 2020, solid-state lighting is expected to save up to 10% of the global electric power consumption and replace a significant percentage of ineffective incandescent bulbs and mercury-containing discharge tubes.
In our talk, we review the history of lighting, LED basics, extraction of light from semiconductor chips, white and UV LEDs, and new applications of solid-state lighting. We also describe our work on optimization of solid-state lighting sources and on the development of versatile white polychromatic lamps with digital feedback that are being tested for a more effective treatment of seasonal affective disorder. Novel application of high-power LEDs for Raman measurements and for water testing is also demonstrated.

[1] A. Zukauskas, M. S. Shur, and R. Gaska, Introduction to Solid-State Lighting (Wiley, New York, 2002).

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy
  2. Stimulated emission in InGaN/GaN structures with different quantum well width
  3. Simulation of localized exciton hopping in quaternary AlInGaN

Presentation: invited oral at E-MRS Fall Meeting 2003, Symposium A, by Arturas Zukauskas
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-06-12 17:18
Revised:   2009-06-08 12:55
© 1998-2021 pielaszek research, all rights reserved Powered by the Conference Engine