Phosphorous doped Bi₂Te₃ thick films have been prepared by electrochemical deposition. The average grain size of the films was calculated to be 14-26 nm based on Scherrer’s equation. The effect of P on the Seebeck coefficient of thermoelectric Bi₂Te₃ thick film was investigated. The results show that P-doped thick film has n-type conductivity with the Seebeck coefficient of -35μV/K. The correlation between P site occupancy in the crystal and the Seebeck coefficient was discussed.

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