Preparation and properties of ZnO based heterogeneous devices

Hadis Morkoc 1Vitaly Avrutin Umit Ozgur Yahya I. Alivov Natalia Izyumskaya 

1. Virginia Commonwealth University (VCU), Department of Electrical Engineering, Richmond, VA, United States

Abstract

ZnO is a wide band gap semiconductor with potential applications to optical emitters due to its very high emission intensity and large exciton binding energy (~60 meV) which persists even at room temperature. In addition, unlike GaN, bulk ZnO substrates with very high quality are available. The bottleneck, however, has been the unambiguous attainment of p-type conductivity. In the interim period, heterojunctions of ZnO with other semiconductors with p- type conductivity are used to demonstrate the potential of this material. In this presentation, growth by MBE, and electrical and optical properties of ZnO/GaN and ZnO/SiC heterojunctions inclusive of band discontinuities will be discussed. In addition, preparation and optical properties of ZnO nanowires will be presented.

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Presentation: Invited oral at E-MRS Fall Meeting 2006, Symposium F, by Hadis Morkoc
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-06-08 18:03
Revised:   2009-06-07 00:44
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