Magnetic properties of Fe doped SiC crystals

Izabela Kuryliszyn-Kudelska 1R. Diduszko 2Emil Tymicki 2Witold Dobrowolski 1Krzysztof Grasza 1,2

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Warszawa 01919, Poland


Recently, ferromagnetic semiconductors have attracted much interest due to potential applications in spin-based information-processing technologies. SiC is a good candidate for spintronic investigations because of its wide bandgap (3.0 eV for 6H polytype) and due to potential technological applications. Recently, magnetic properties of Fe- implanted SiC were investigated [1]. In the present studies SiC crystals were grown by Physical Vapor Transport method. We used Fe enriched source material to dope crystals. The growth temperature was equal to 21500C. DC magnetization measurements performed at low temperatures and low magnetic fields revealed ferromagnetic type of magnetic ordering. In the low magnetic field magnetization data the hysteresis loops are present. The structural investigation using powder XRD were performed. The presence of nonmagnetic FeSi precipitates ([2]) was observed. We will present the systematic magnetic measurements including AC susceptibility and DC magnetization up to 9T in the range of low and high temperatures as well as structural studies using powder XRD. The chemical analysis using SIMS will be performed. The origin of ferromagnetic behaviour will be discussed.

[1] N. Theodoropoulou et al., Electrochemical and Solid-State Letters, 4 (12) G119-G121 (2001)

[2] V. Jaccarino et al., Phys. Rev. 160, 476, (1967)

Legal notice
  • Legal notice:

    Copyright (c) Pielaszek Research, all rights reserved.
    The above materials, including auxiliary resources, are subject to Publisher's copyright and the Author(s) intellectual rights. Without limiting Author(s) rights under respective Copyright Transfer Agreement, no part of the above documents may be reproduced without the express written permission of Pielaszek Research, the Publisher. Express permission from the Author(s) is required to use the above materials for academic purposes, such as lectures or scientific presentations.
    In every case, proper references including Author(s) name(s) and URL of this webpage: must be provided.


Related papers
  1. Modeling of growth kinetics of SiC single crystal in PVT process
  2. The influence of the PVT growth conditions on the SiC crystal shape
  3. Optical Characterisation of Bulk ZnO Crystals Grown by CVT
  4. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  5. The influence of growth atmosphere on the self-selection of the grains during ZnO crystal growth
  6. Raman scattering from ZnO doped with Fe, Mn and Co nanoparticles
  7. Lattice dynamics and Raman spectroscopy of ZnO:Mn crystals
  8. Low-frequency Raman scattering from transition-metal-doped ZnO nanoparticles
  9. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  10. Initial Stage of SiC Crystal Growth by PVT Method
  11. Preparation of the ZnO substrate surface
  12. Stability diagram for crystal growth from the vapor
  13. Ferromagnetism in ZnO:Mn thin films deposited by PEMOCVD
  14. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  15. Structure properties of bulk ZnO crystals
  16. Ferromagnetism of In1-XMnXSe and behaviour of excess Mn in InSe crystal
  17. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
  19. CVT contactless growth of ZnO crystals

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Izabela Kuryliszyn-Kudelska
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-25 11:57
Revised:   2009-06-07 00:44
© 1998-2022 pielaszek research, all rights reserved Powered by the Conference Engine