Stoichiometry related point defects in InN

K. Scott A. Butcher 1Patrick P. Chen Marie Wintrebert-Fouquet 

1. Macquarie University, Sydney 2109, Australia


The Moss-Burstein effect has been invoked by a number of groups to explain variations in the band-edge absorption for InN samples of different carrier concentration. However, the variation of band-edge values reported in the literature is simply too broad to be explained solely by this effect. At least 5 separate apparent Moss-Burstein trends have been reported over the years [1-5], these trends appear to be related to the different methods of film growth used. We have examined samples that fall along one of the recently reported lines and find that it is dominated by a particular type of defect, and further suggest that the variations observed in the absorption properties of materials nominally referred to as InN are largely determined by stoichiometry related point defects.

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[4] W. Walukiewicz, S. X. Li, J. Wu, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, W. J. Schaff, J. Crystal Growth 269 (2004) 119.
[5] B. Maleyre, O. Briot, S. Ruffenach and B. Gil, Phys. Stat. Sol. C 2 (2005) 1379.

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Presentation: invited oral at E-MRS Fall Meeting 2005, Symposium A, by K. Scott A. Butcher
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-19 23:24
Revised:   2009-06-07 00:44
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