We show that if growth is stable and nucleation of graphene layers on terraces is faster than their propagation, the kinetics of graphene growth becomes considerably simplified. Using these assumptions, we introduce different rates of growth of different layers. These parameters model effectively different rates of diffusion of Si through graphene layers, which is a crucial agent determining graphene growth kinetics. KMC numerical data will be provided, as well as different methods of extracting model's parameters from experimental data.

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1. A simple model of epitaxial graphene growth on SiC substrates