Graphene, an atom-thick, two-dimensional carbon sheet holds great promise for future application in high-speed electronics. One of the most important challenges for researchers since its discovery has been manufacturing graphene sheets of high quality and controlling the growth kinetics. In our work, we present a theoretical model of growth of graphene on (0001) face of 6H-SiC . The model is an extension of the kinetic MC model of graphene growth proposed by Ming & Zangwill (PR B 84, 115459 (2011)).

We show that if the growth is stable and nucleation of graphene layers on terraces is faster than their propagation, kinetic equations describing evolution of the system in time simplify considerably. The growth dynamics is then characterized by a number of linear growth regimes, in each of which the growth rate remains constant. We will show that model is self-consistent by comparing its predictions with KMC numerical data. Different methods of extracting model's parameters from experimental data will be discussed.

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1. Modeling of growth of graphene on SiC substrate