Growing semiconductor nitrides into spintronic and magnetooptic materials
Institut für Halbleiter und Feskörperphysik, Johannes Kepler Universität (FKP-JKU), Altenbergerstr. 69, Linz 4040, Austria
Due to their unique photonic properties, gallium nitride (GaN) and related compounds have already raised to the position of technologically most significant semiconductors next to Silicon. The addition of magnetic functionalities to these materials systems is expected to open striking views in both fundamental and application-oriented research.
I will review our recent work on the metalorganic vapor phase epitaxy (MOVPE) of magnetic nitrides and summarize how - by exploiting in particular synchrotron-radiation and microscopy techniques - we have correlated the growth parameters and procedures to the structural, magnetic, optical properties of the epitaxial layers. I will give an overview on how we have unraveled and we can now control a number of non-anticipated features of these systems, like the nature of superexchange ferromagnetic interactions and the self-aggregation of functional magnetic cations and magnetoopticl impurity complexes driven by fabrication parameters and co-doping [1-13].
 A. Bonanni, et al., Phys. Rev. B 75, 125210 (2007).
Presentation: Invited oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 2, by Alberta Bonanni
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
Submitted: 2013-03-29 22:36 Revised: 2013-03-29 22:36
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