Growth, Fe incorporation, and properties of GaN:Fe and (Ga,Fe)N:Mg

Alberta Bonanni 

Institut für Halbleiter und Feskörperphysik, Johannes Kepler Universität (FKP-JKU), Altenbergerstr. 69, Linz 4040, Austria


It has become clear over the recent couple of years that a progress in the development of functional diluted ferromagnetic semiconductors requires the determination of growth phase diagrams for particular hosts and for particular magnetic dopants, including a quantitative information on the substitutional vs. interstitial incorporation of the magnetic ions as well as on spinodal decomposition and on precipitation of different crystallographic phases [1]. In this talk, I will review our recent work on the growth [2] and characterization [3] of the GaN:Fe and (Ga,Fe)N:Mg materials systems with special attention at the incorporation of the transition metal ions into the hexagonal GaN matrix. All our GaN:Fe and (Ga,Fe)N:Mg samples have been grown by means of metalorganic chemical vapor deposition on c-sapphire substrates and thoroughly characterized via high-resolution x-ray diffraction, transmission electron microscopy [4], secondary-ion mass spectroscopy, photoluminescence, spectroscopic ellipsometry [5], Hall-effect, electron-spin resonance [6], SQUID magnetometry [7] and extended X-ray absorption fine structure [8]. These studies provide information on the solubility limit and on the charge state of Fe in GaN substitutional sites for various growth conditions, and elucidate the relation between the character of Fe incorporation and magnetic, optical and transport properties of this model materials system.
[1] T. Dietl, Spintronics in nitrides, MRS Proceedings, vol. 831, eds. C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra (MRS, 2005) E9.1
[2] A. Bonanni et al., Phys. Stat. Sol. (a), in print
[3] H.Przybylinska et al., Mat. Sci. and Eng. B 126 (2006) 222
[4] T.Li et al., Appl. Phys. Lett. 86, 241911 (2005)
[5] K.Schmidegg et al., J. Cryst. Growth 275, 1763 (2005)
[6] A.Wolos et al., Phys. Rev. B 69, 115210 (2004)
[7] M.Sawicki et al., Phys. Rev. B 70, 245325 (2004)
[8] F.d'Acapito et al., Phys. Rev. B 73, 035314 (2006)

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Related papers
  1. On the formation of magnetic nanocomposites and impurity complexes in GaN doped with Fe and Mn
  2. Growth and doping of (Ga,Mn)N epitaxial films
  3. Growing semiconductor nitrides into spintronic and magnetooptic materials
  4. Magnetyczna spektroskopia i spektro-mikroskopia na materiałach spintronicznych
  5. The aggregation of magnetic cations in a semiconductor
  6. Photoluminescence and Hall studies of GaN:Fe and (Ga,Fe)N:Mg layers

Presentation: Invited oral at E-MRS Fall Meeting 2006, Symposium E, by Alberta Bonanni
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-19 21:22
Revised:   2009-06-07 00:44
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