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The effect of boron concentration on facet formation in in-situ doping silicon selective epitaxial growth

Wonseok Yoo 

SAMSUNG ELECTRONICS CO. LTD., Hwasung 445-701, Korea, South

Abstract

The effect of boron concentration on sidewall facet formation at SiO2/Si interface during in-situ doping silicon selective epitaxial growth was investigated using a standard production Chemical Vapor Doposition(CVD) reactor. Cross sectional SEM analysis revealed that films grown through oxide contacts with (110) sidewall orientations exhibit not any facets in case of high boron concentration(>1e20/cm3), but typically (111) facets are well defined at low boron concentration(<1e19/cm3). In order to find the cristical limits of process conditions degrading crystalline quality, B2H6 gas flow rate, HCl gas flow rate and temperature were varied. Consequently degradation of crystalline quality must be because of boron dopants which impede the growth of the epitaxial layer and facilitate the formation of extended defects.

 

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Presentation: Oral at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, General Session 1, by Wonseok Yoo
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2012-08-23 07:22
Revised:   2012-08-23 07:24