The continued scaling of silicon-based device is rapidly reaching the physical limit of Moore’s law and the semiconductor industry will soon replace the traditional CMOS (Complementary Metal-Oxide Semiconductor) technology with new materials and processes. Films of few nanometers thicknesses, quantum dots, quantum wires are the basis of the modern electronic industry and X-ray diffraction techniques will play a new and very important role as a powerful characterization tool for determining the detailed structural information of ultra-thin film such as: the evolution of strain relaxation, defect formation, interfacial properties between film/substrate, the effects of the reduced dimensionality and their correlation to the physical properties (transport and magnetic). Materials of technological interests are: SiGe, exotic oxides, high and low K dielectrics, new materials for interconnects and formemory storage/spintronics, organic thin films.

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