In this study, transparent thin-film transistors (TTFTs) with active channel of zinc oxide (ZnO) were fabricated, where as well as bottom-gated structrues, top-gated structures were used. The electrode was ITO, and gate insulator was Al₂O₃ by atomic layer deposition. ZnO films were made by two methods; one is the oxidation of sputtered metal Zn film, where Zinc could be oxidized by various methods such as furnace anneal, plasma treatment, and UV-lamp heating process, while the other is radio frequency (RF) reactive sputtering method using metal zinc target. Reactively sputtered ZnO films were formed under the condition of different working pressures, gas ratios (oxygen/oxygen+argon) and rf powers. The band-gap energies of reactively sputtered ZnO films were changed by both deposition condition and post-anneal condition, which affected device properties. ZnO films from both methods had good optical transmittances at 550nm (around 80% or higher). The correlation between ZnO films and the device properties was investigated by X-ray diffraction (XRD), trasmission electronscanning electron microscopy (SEM) and atomic force microscopy (AFM). Current-voltage (I-V) properties measured through the gate showed that the channel was n-type, and I_on/I_off ratio was more than 10⁶.

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1. Transparent Integrated Circuit with ZnO TFT and TCO
2. UV beam treatments for optical and magnetic materials