Spin-coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX₂ and Cu(In,Ga)X₂ where X=S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pretreatment and chalcogenation treatment is discussed with respect of film applicability in photovoltaic devices. Layer morphology and stochiometry varied widely with the different treatments.

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