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prof Yasushi Nanishi
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+81-77-5612679
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+81-77-5613994
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Affiliation:
Department of Photonics, Ritsumeikan University
address:
, Kusatsu, 525-8577,
Japan
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fax:
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Participant:
E-MRS Fall Meeting 2009
began:
2010-09-14
ended:
2010-09-18
Presented:
E-MRS Fall Meeting 2009
Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices
Publications:
Effects of TMSb overpressure on InSb surface morphologies during a thermal cleaning process by metal organic chemical vapor deposition
Growth and optical properties of nitride dot-in-a-wire structure on Si substrate
Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation
Hollow nanostructure-assisted growth of GaN by MOCVD and its applications
Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices
Study of the flat band voltage shift in Metal/Insulator/n-GaN cacitors by annealing
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