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prof Yasushi Nanishi

e-mail:
phone: +81-77-5612679
fax: +81-77-5613994
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interest(s):

Affiliation:


Department of Photonics, Ritsumeikan University

address: , Kusatsu, 525-8577, Japan
phone:
fax:
web:

Participant:


E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

E-MRS Fall Meeting 2009

Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices

Publications:


  1. Effects of TMSb overpressure on InSb surface morphologies during a thermal cleaning process by metal organic chemical vapor deposition
  2. Growth and optical properties of nitride dot-in-a-wire structure on Si substrate
  3. Growth of InN and Related Alloys Using Droplet Elimination by Radical Beam Irradiation
  4. Hollow nanostructure-assisted growth of GaN by MOCVD and its applications
  5. Present Status and New Challenges of Nitride Semiconductors for Advanced Electronic Devices
  6. Study of the flat band voltage shift in Metal/Insulator/n-GaN cacitors by annealing



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