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- Satoshi Nakano

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fax: +81-92-5837743
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Affiliation:


Kyushu University

address: , Fukuoka, , Japan
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Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Evaluation of numerical analysis of residual strain and dislocation density  in a multicrystalline silicon for solar cells

Publications:


  1. Crystal growth of 50 cm square single crystal Si by directional solidification and its characterization
  2. Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions
  3. Evaluation of numerical analysis of residual strain and dislocation density  in a multicrystalline silicon for solar cells
  4. Relationship between cooling flux direction and activation of slip systems of single -crystal silicon grown in [001] and [111] directions
  5. Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory



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