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- Toshiharu Ohnuma

e-mail: ***@criepi.denken.or.jp
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Affiliation:

Central Research Institute of Electric Power Industry

address: , Tokyo, 201-8511, Japan
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Participant:

E-MRS Fall Meeting 2008

began: 2008-09-15
ended: 2008-09-19
Presented:
E-MRS Fall Meeting 2008
Dynamical simulation of SiO2/4H-SiC C-face interface oxidation process at 1500K

Publications:
  1. Dynamical simulation of SiO2/4H-SiC C-face interface oxidation process at 1500K



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