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Irina V. Antonova
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Affiliation:
Institute of Semiconductor Physics SB RAS
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pr. Lavrentieva 13, Novosibirsk, 630090,
Russian Federation
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Participant:
E-MRS Fall Meeting 2005
began:
2005-09-05
ended:
2005-09-09
Presented:
E-MRS Fall Meeting 2005
Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
Publications:
Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
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