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prof Alexandros Georgakilas
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phone:
+30-2810-394105
fax:
+30-2810-394106
web:
http://www.iesl.forth.gr/research/material/mrg/
interest(s):
Affiliation:
Microelectronics Research Group, Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, and University of Crete, Physics Department
address:
, Heraklion, 71110,
Greece
phone:
fax:
web:
Participant:
E-MRS Fall Meeting 2009
began:
2010-09-14
ended:
2010-09-18
Presented:
E-MRS Fall Meeting 2009
High quality (0001) GaN films grown on diamond substrates by molecular beam epitaxy
Publications:
Electron microscopy of InGaN nanorods spontaneously grown on Si (111) substrates
High quality (0001) GaN films grown on diamond substrates by molecular beam epitaxy
Study of the influence of crystal orientation and bond polarity on the potentiometric response of III-N surfaces
Thickness dependence of electrical properties of c- and a-plane InN films
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