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Martin Eickhoff

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Affiliation:


Technische Univ. München, Walter Schottky Institut

address: Am Coulombwall 3, Garching, D-85748, Germany
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Participant:


E-MRS Fall Meeting 2004

began: 2004-09-06
ended: 2004-09-10
Presented:

E-MRS Fall Meeting 2004

Properties and Applications of Group-III-Nitrides Solution-Gate Field-Effect Transistors

Publications:


  1. Influence of exciton-phonon interaction on the absorption properties of ZnMgO alloys
  2. Properties and Applications of Group-III-Nitrides Solution-Gate Field-Effect Transistors



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