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- Dominika N. Teklińska

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phone: +48-22-8353041
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Affiliation:


Instytut Technologii Materiałów Elektronicznych

address: Wólczyńska, Warszawa, 01-919, Poland
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Affiliation:


Politechnika Warszawska

address: pl.Politechniki, Warszawa, 00-661, Poland
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web: http://www.pw.edu.pl/

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates

Publications:


  1. Improvement of the quality of polished SiC wafers using chemical oxidation and heat treatment
  2. The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates



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