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- Dominika N. Teklińska
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Affiliation:
Instytut Technologii Materiałów Elektronicznych
address:
Wólczyńska, Warszawa, 01-919,
Poland
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Affiliation:
Politechnika Warszawska
address:
pl.Politechniki, Warszawa, 00-661,
Poland
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web:
http://www.pw.edu.pl/
Participant:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
began:
2013-08-11
ended:
2013-08-16
Presented:
17th International Conference on Crystal Growth and Epitaxy - ICCGE-17
The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
Publications:
Improvement of the quality of polished SiC wafers using chemical oxidation and heat treatment
The influence of pressure on growth of 3C-SiC heteroepitaxial layers on silicon substrates
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