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D. Bouchier
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Affiliation:
Institut d'Electronique Fondamentale, UMR-CNRS 8622, 91405 Orsay Cedex, France
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, , ,
France
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Publications:
Dislocation and antiphase domain-free microscale GaAs crystals grown on SiO
2
from (001) and (111) Si nano-areas
Selective epitaxial growth of Ge/Si quantum dots on patterned Si(001) substrate by ultra high vacuum chemical vapor deposition
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