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dr Matteo Bosi
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Publications:
3C-SiC growth and characterization using methyltrichlorosilane
Growth and characterization of 3C-SiC nanowires on silicon substrates using different catalysts
Growth and Nanomechanical Studies of Semiconducting Epilayers
Influence of synthesis temperature on SiC nanowires structure and shape
Influence of the growth conditions on the properties of Germanium epilayers grown by MOVPE on Si
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