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T. Bottcher

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Affiliation:

University of Bremen, Institute of Solid State Physics

address: P.O. Box 330440, Bremen, 28334, Germany
phone: +49 421 218 7453
fax: +49 421 218 4581
web: http://www.ifp.uni-bremen.de

Publications:
  1. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  2. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  3. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN



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