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dr Paweł Prystawko
Bowing of epitaxial structures grown on bulk GaN substrates
Built-in electric fields in group III-nitride light emitting quantum structures
High-resolution photoinduced transient spectroscopy of defect centers in Mg-doped GaN
Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
Surface morphology of InGaN layers
X-ray Diffraction as a Tool of InGaN layer Characterization.
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