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Numerical investigation of crystal growth process of bulk Si, SiC and nitrides
Kyushu University, Fukuoka, Japan
This paper introduces the potential regarding numerical analysis of crystal growth process of bulk Si, SiC and nitrides by using a global model. A three-dimensional analysis of temperature distribution in a TMCZ furnace of Si single crystals was studied by using an originally developed algorithm. Temperature distribution in a furnace for SiC by using sublimation method was also investigated. Moreover, thermal conductivity of four difference poly-type of SiC was studied by using molecular dynamics method. The growth rate of GaN was numerically investigated by using a global model in a system of solution growth. We considered the local equilibrium condition of nitrogen at a free surface of gallium and lithium mixed melt in this calculation. Thermal conductivity of nitrides was investigated by molecular dynamics from the point of view of defects such as vacancies and dislocations.
Presentation: Invited oral at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Koichi Kakimoto
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Submitted: 2007-01-10 05:45 Revised: 2009-06-07 00:44