Indium sulphide (In₂S₃) is an important material for optoelectronic and photovoltaic applications [1, 2]. It can be used as substitute for cadmium sulphide (CdS) in Cu(InGa)(SSe)₂ (CIGS) based solar cells to avoid toxic cadmium and obtain more environmentally friendly photovoltaic technology. A recent paper report the technical progress that has occurred in the last years in the development of Cd-free buffer layers for CIGS thin-film solar cells, in different laboratories, deposited by different methods [3]. Among them, In₂S₃, with optimal physical properties can meet the requirements to be used as window material or buffer layer for these photovoltaic structures.

In this work the In₂S₃ films have been grown on soda lime glass with different compositon, temperature, stirring and time of deposition. The kinetics growth of layers deposited by CBD is studied with a quartz crystal microbalance. Different physical, chemical and morphological properties of the films have been obtained. Analysis of surface and bulk composition is performed with XPS showing mixed composition.

The absorption coefficient spectra of the films prepared showed a variation depending on the CBD conditions.The absorption edges vary between 2.2 and 3.45 eV.

Surface morphology of the films, observed with scanning electron microscopy, reveals changes with the temperature and time of deposition.

References

[1] T. Asikainen, M. Ritola and M. Leskela, Appl. Surf. Sci. 82 , (1994)122

[2] N. Naghavi, S. Spiering, M. Powalla, B. Cavana, D. Lincot, Prog. Photovolt. Res. Appl 11 (2003) 437.

[3] D. Hariskos, S. Spiering and M. Powalla, Thin Solid Films, 480-481 (2005) 99

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