IR and THz electronics: from materials to devices
The symposium will be focused on materials properties, and their functionality for IR and THz Electronics. IR and THz detectors, and also THz sources, as cooled and uncooled, are the parts which are the key-points that define the ultimate performance of IR and THz imaging and spectroscopic systems. Also, it is supposed to engage to the Meeting the specialists in modeling and simulation of these components. Further development physics based modeling and simulation is important for subsequent development of costly save IR and THz vision and spectroscopic systems. Development of such high performance systems, modeling and simulation of their parts will continue to be of interest to wide audience for several reasons: First, these parts are important systems components for standoff detection of objects with different chemical composition, security applications, etc., as they qualify the system parameters. Second, development in the fields mentioned, is supposed, will promote design of more advanced IR and THz systems. Development of IR and THz e.g. imaging and spectroscopic systems to provide the detectors and associated electronics capabilities is complex and costly. Advanced devices, including the low-dimensional structures, their design and manufacturing especially of uncooled or slightly cooled parts, must be used to reduce cost and extend application capabilities of IR and THz systems.
Objectives: The objectives of this Meeting are to review the current state of the art of materials for IR and THz detectors, and also THz sources. The aim of the Meeting is to provide a clear view on the current technology and the required advances to achieve more efficient systems. Also the aim is to establish the baseline of current uncertainty estimations in physics-based modeling and simulation and to identify key areas requiring further research and development.
Topics to be covered: Topics will address material properties, detectors physics, detectors design and technology based manufacturing, their modeling and simulations. The program will be completed with a discussion on the experience acquired over the past years in developing of the advanced detectors in Europe and USA.
List of invited speakers with tentative titles:
- Prof. S. Ganichev, University of Regensburg, Germany – All electical detection of the Stokes parameters of infrared/terahertz radiation
- Prof. G.N. Gol’tsman, Moscow State Pedagogical Institute, Russia – Superconducting hot-electron bolometer based on NbN nanostructures as THz mixer, direct detector and IR single-photon counter
- Dr. W. Knap, Institute of Physics CNRS & Montpellier University, France – Comparison of silicon versus III-V semiconductor material choice for terahertz imaging with fast field effect transistors based detectors
- Prof. S. Krishna, New Mexico Univ., Albuquerque, NM, USA – Infrared detectors with nanoscale quantum dots and superlattices - Prof. H.C. Liu, Institute for Microstructural Sciences, Ottawa, Canada – THz quantum cascade lasers
- Prof. H.C. Liu, Institute for Microstructural Sciences, Ottawa, Canada – THz quantum cascade lasers
- Dr. J. Piotrowski, VIGO System SA, Warsaw, Poland – Room temperature infrared photodetectors
- Dr. R. Rehm, Fraunhofer-Institut für Angewandte Festkörperphysik, Germany – Physics, technology and performance of strained layer superlattice infrared detectors
- Prof. H.-P. Roser, Universität Stuttgart, Germany – Electron transport in nanostructures: The key to hgh temperature superconductivity
- Dr. A.P. Schkurinov, Lomonosov Moscow State University, Russia – Porous and oxide materials in the terahertz frequency range
- Dr. H. Zogg, Swiss Federal Institute of Technology, Zurich – Mid infrared resonant cavity detectors and lasers with epitaxial lead-chalcogenides
- Prof. Fiodor F. Sizov - chairman Institute of Semiconductor Physics Nauki Av., 41, Kiev-03028,Ukraine Phone number: 380-44-5256296 Fax number: 380-44-5251810 E-mail: firstname.lastname@example.org
- Prof. Antoni Rogalski – co-chairman Institute of Applied Physics Military University of Technology 2 Kaliskiego Str., 00-908 Warsaw, Poland Phone number: (48)22 6839109 Fax number: (48)22 6839109 E-mail: email@example.com
- Prof. Dr. Hans-Peter Roeser – co-chairman Universität Stuttgart, Institut für Raumfahrtsysteme Pfaffenwaldring 31, 70569 Stuttgart, Germany Phone number: +49 (0)711-685-62375 Fax number: +49 (0)711-685-63596 E-mail: firstname.lastname@example.org
- Dr. A.P. Schkurinov – co-chairman Moscow State University, 119991, Moscow, Physical Department, Phone number: +7-495-9391106 email@example.comInternational Program Committee: S. Dvoretskii, Russia; I. Izhnin, Ukraine; S. Krishna, USA; H.C. Liu, Canada; A.G.U. Perera, USA; R. Rehm, Germany; V. Shul’ga, Ukraine; H. Zogg, Switzerland