Search for content and authors
 

dr Toshinori Taishi

e-mail:
phone: +81-26-2695383
fax: +81-26-2695383
web:
interest(s):

Affiliation:


Shinshu University

address: 4-17-1 Wakasato, Nagano, 380-8553, Japan
phone: +81-26-2695537
fax: +81-26-2695550
web:

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Growth of heavily tin-doped Si

Publications:


  1. Characteristic Void Alignment in Sapphire Crystals Grown by the Vertical Bridgman Method
  2. Effect of heat transfer on the crystal-melt interface shape of sapphire crystal grown using the vertical Bridgman method
  3. Growth of heavily tin-doped Si
  4. Morphology and formation mechanism of metallic inclusions in VB-grown sapphire crystals
  5. Specific Surface Free Energy of Crucible Material for Sapphire Crystal Synthesis
  6. Vertical Bridgman Growth of Sapphire Crystals with Thin Neck Formation Process
  7. Vertical Bridgman Growth of Sapphire - Seed crystal shapes and seeding processes-



Google
 
Web science24.com
© 1998-2024 pielaszek research, all rights reserved Powered by the Conference Engine